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Highly doped semiconductor “designer metals” have been shown to serve as high-quality plasmonic materials across much of the long-wavelength portion of the mid-infrared. These plasmonic materials benefit from a technologically mature semiconductor fabrication infrastructure and the potential for monolithic integration with electronic and photonic devices. However, accessing the short-wavelength side of the mid-infrared is a challenge for these designer metals. In this work we study the perspectives for extending the plasmonic response of doped semiconductors to shorter wavelengths by leveraging charge confinement, in addition to doping. We demonstrate, theoretically and experimentally, negative permittivity across the technologically vital mid-wave infrared (3–5  $\mathrm{\mu <\#comment/>}$m) frequency range. The semiconductor composites presented in our work offer an ideal material platform for monolithic integration with a variety of semiconductor optoelectronic devices operating in the mid-wave infrared. 

We report the theoretical prediction and experimental realization of the optical phenomenon of “ballistic resonance.” This resonance, resulting from the interplay between free charge motion in confining geometries and periodic driving electromagnetic fields, can be utilized to achieve negative permittivity at frequencies well above the bulk plasma frequency. As a proof of principle, we demonstrate all-semiconductor hyperbolic metamaterials operating at frequencies 60% above the plasma frequency of the constituent doped semiconductor “metallic” layer. Ballistic resonance will therefore enable the realization and deployment of various applications that rely on local field enhancement and emission modulation, typically associated with plasmonic materials, in new materials platforms.